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| 型号 | RRQ030P03TR |
| 厂商 | Rohm Semiconductor |
| 描述 | MOSFET P-CH 30V 3A TUMT6 |
| RRQ030P03TR PDF |  |
| 代理商 | RRQ030P03TR |
| 标准包装 | 3,000 |
| FET 型 | MOSFET P 通道，金属氧化物 |
| FET 特点 | 逻辑电平门 |
| 漏极至源极电压(Vdss) | 30V |
| 电流 - 连续漏极(Id) @ 25° C | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C | 75 毫欧 @ 3A，10V |
| Id 时的 Vgs(th)（最大） | 2.5V @ 1mA |
| 闸电荷(Qg) @ Vgs | 5.2nC @ 5V |
| 输入电容 (Ciss) @ Vds | 480pF @ 10V |
| 功率 - 最大 | 1.25W |
| 安装类型 | 表面贴装 |
| 封装/外壳 | SC-95-6 |
| 供应商设备封装 | TSMT6 |
| 包装 | 带卷 (TR) |
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